In0.1Ga0.9As0.9P0.1

semiconductor

· In0.1Ga0.9As0.9P0.1

In0.1Ga0.9As0.9P0.1 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus in a lattice-matched or near-lattice-matched configuration to GaAs substrates. This material is engineered for optoelectronic and high-frequency applications where the bandgap and lattice parameters must be precisely tuned; it occupies a specific niche in the InGaAsP material family that enables efficient light emission and detection in the near-infrared spectrum while maintaining compatibility with established GaAs processing infrastructure.

Optoelectronic devices (LEDs, lasers)Infrared detectorsHigh-electron-mobility transistors (HEMTs)Integrated photonicsFiber-optic communicationsResearch and specialized RF/microwave circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.1Ga0.9As0.9P0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control