In0.1Ga0.9As0.1P0.9

semiconductor

· In0.1Ga0.9As0.1P0.9

In0.1Ga0.9As0.1P0.9 is a quaternary III-V semiconductor alloy combining indium, gallium, arsenic, and phosphorus in a lattice-matched configuration to GaAs substrates. This material is engineered for optoelectronic applications where direct bandgap tuning and lattice compatibility are critical, offering a balance between the properties of GaAs and InP binary compounds. The low indium and arsenic content makes it particularly suited for visible-to-near-infrared light emission and detection where cost-effective, high-reliability devices are needed alongside performance beyond simple binary semiconductors.

LED and laser diodesOptical communication receiversSolar cells and photovoltaicsIntegrated photonics on GaAsHeterostructure devicesResearch optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.250	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.1Ga0.9As0.1P0.9

Electrical Properties

Regulatory Screening

Environmental

Export Control