In0.1As0.1Ga0.9P0.9

semiconductor

· In0.1As0.1Ga0.9P0.9

In0.1As0.1Ga0.9P0.9 is a quaternary III-V semiconductor alloy combining indium, arsenic, gallium, and phosphorus in a lattice-matched or near-matched configuration to GaAs or InP substrates. This compound belongs to the indium gallium arsenide phosphide (InGaAsP) family and is primarily investigated for optoelectronic applications where bandgap engineering and lattice matching enable efficient light emission and detection across infrared wavelengths. The specific composition positions this alloy for telecommunications and sensing applications, offering an alternative to purely binary or ternary compounds by tuning optical and electronic properties through quaternary alloying.

fiber-optic telecommunicationsinfrared LEDs and lasersphotodetectors and avalanche photodiodesintegrated photonicsresearch/development optoelectronicswavelength-tunable devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.250	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.1As0.1Ga0.9P0.9

Electrical Properties

Regulatory Screening

Environmental

Export Control