In0.07Te1Pb0.93

semiconductor

· In0.07Te1Pb0.93

In0.07Te1Pb0.93 is a narrow-bandgap semiconductor alloy in the lead telluride (PbTe) family with indium doping, belonging to the IV-VI group of semiconductopic materials. This composition sits within the well-established PbTe thermoelectric material system and is primarily of research interest for enhancing thermoelectric performance through band structure engineering via indium incorporation. The indium-doped lead telluride family is investigated for improved figure-of-merit in solid-state heat-to-electricity conversion and cooling applications, where controlled doping modifies carrier concentration and phonon scattering to optimize the Seebeck coefficient and reduce thermal conductivity relative to undoped PbTe.

thermoelectric power generationwaste heat recoverysolid-state cooling devicesinfrared detectorsresearch phase semiconductorsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3200	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.07Te1Pb0.93

Electrical Properties

Regulatory Screening

Environmental

Export Control