In0.04Te1Pb0.96

semiconductor

· In0.04Te1Pb0.96

In0.04Te1Pb0.96 is a lead telluride-based semiconductor alloy with a small indium dopant concentration, belonging to the IV-VI narrow bandgap semiconductor family. This material is primarily of research interest for thermoelectric applications, where it exploits the high Seebeck coefficient and carrier mobility of PbTe while the indium incorporation may be used to fine-tune bandgap, carrier concentration, or phonon scattering for enhanced figure-of-merit. The lead telluride platform remains commercially important in mid-temperature thermoelectric generators and infrared detectors, though this specific composition appears to be an experimental variant rather than a standard industrial product.

thermoelectric power generationinfrared detectors and imagingwaste heat recoverymid-temperature energy conversionbandgap engineering researchphonon scattering optimization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3700	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.04Te1Pb0.96

Electrical Properties

Regulatory Screening

Environmental

Export Control