In0.01Te1Pb0.99

semiconductor
· In0.01Te1Pb0.99

In₀.₀₁Te₁Pb₀.₉₉ is a heavily lead-telluride-based narrow-bandgap semiconductor doped with a small amount of indium, belonging to the IV-VI narrow-gap semiconductor family. This material is primarily of research interest for infrared detection and thermoelectric applications, where the indium doping modulates the electronic properties of the base PbTe matrix to optimize performance in mid- to long-wavelength infrared sensing or thermal-to-electrical energy conversion. While not yet widely deployed in mainstream commercial products, lead telluride-based compounds are valued in specialized aerospace and defense optoelectronics because of their tunable bandgap and strong thermoelectric figure of merit at moderate temperatures.

infrared detectorsthermoelectric cooling/power generationnarrow-bandgap semiconductorsaerospace optoelectronicsresearch/development phasethermal imaging sensors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.
In0.01Te1Pb0.99 — Properties & Data | MatWorld