In0.01Ga0.99As1

semiconductor

· In0.01Ga0.99As1

In0.01Ga0.99As is a heavily gallium-rich indium gallium arsenide (InGaAs) ternary semiconductor alloy with only 1% indium doping into a GaAs lattice. This compound exists at the boundary between pure GaAs and dilute InGaAs alloys, typically explored in research contexts to study how minimal indium incorporation affects bandgap energy, lattice constant, and device performance compared to binary GaAs. The material is of interest in optoelectronic and high-frequency device development where fine tuning of GaAs properties is desired while maintaining near-GaAs processing compatibility and cost structure.

infrared photodetectorshigh-electron-mobility transistors (HEMTs)solar cells and photovoltaicsintegrated photonicsresearch/experimental semiconductorsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.01Ga0.99As1

Electrical Properties

Regulatory Screening

Environmental

Export Control