In0.01Ga0.99As0.99P0.01

semiconductor

· In0.01Ga0.99As0.99P0.01

In0.01Ga0.99As0.99P0.01 is a heavily gallium-rich III-V semiconductor alloy with minimal indium and phosphorus doping, representing a near-GaAs composition with subtle bandgap engineering. This material belongs to the GaAs-based alloy family and is primarily of research interest for lattice-matched heterostructures and optoelectronic devices where precise bandgap tuning is required without dramatic compositional shifts. The material is used in experimental optoelectronic applications including laser diodes, photodetectors, and high-efficiency solar cells where the small InP addition provides lattice matching or bandgap adjustment relative to standard GaAs platforms.

optoelectronic researchsemiconductor heterostructuresphotovoltaic devicesinfrared detectorslaser diode substrates

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.430	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In0.01Ga0.99As0.99P0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control