In0.01Al0.99P
semiconductor· In0.01Al0.99P
In0.01Al0.99P is a narrow-bandgap III-V semiconductor alloy consisting of 1% indium and 99% aluminum phosphide, representing a slight indium doping of aluminum phosphide. This material belongs to the III-V compound semiconductor family and is primarily of research interest for tuning the electronic and optical properties of aluminum phosphide for optoelectronic and high-temperature device applications. The small indium incorporation reduces the bandgap compared to pure AlP, making it relevant for UV-visible optoelectronic devices and high-power, high-temperature electronics where AlP's wide bandgap properties are desired but modest bandgap narrowing improves device efficiency.
optoelectronic devices (UV-visible)high-temperature electronicsresearch compound developmentbandgap engineeringIII-V semiconductor applicationsquantum wells and heterostructures
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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