In0.005Te1Pb0.995

semiconductor
· In0.005Te1Pb0.995

In0.005Te1Pb0.995 is a heavily lead-telluride-based narrow bandgap semiconductor with minimal indium doping (0.5%), representing a variant within the IV-VI narrow-gap semiconductor family. This material is primarily of research interest for infrared detection and thermoelectric applications, where the telluride base provides narrow bandgap properties suited to mid- to far-infrared wavelengths, while indium doping modulates electronic and thermal transport characteristics. The composition is distinct from conventional PbTe and suggests optimization for either infrared photodetector sensitivity or thermoelectric figure-of-merit in specialized temperature regimes, though such heavily doped variants remain largely experimental.

infrared detectors (mid/far-IR)thermoelectric cooling/power generationnarrow-gap semiconductor researchthermal imaging sensorscryogenic applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.
In0.005Te1Pb0.995 — Properties & Data | MatWorld