I₄O₄F₁₂ is a fluoride-based inorganic semiconductor compound, likely an iodine oxide fluoride with potential applications in electronic and photonic device research. This material represents an emerging class of mixed-anion semiconductors that combine oxygen and fluorine coordination, offering potential advantages in band gap engineering and ionic conductivity compared to conventional oxide or fluoride semiconductors. The compound appears to be primarily in the research phase, with applications targeting niche electronic or optoelectronic roles where the unique combination of iodine, oxygen, and fluorine chemistry provides distinct electrical or optical properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,584.9 | ksi | — | ||
Shear Modulus(G) | 1,968.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.439 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.281 | eV/atom | — |