I4 F12 is a semiconductor compound with unspecified elemental composition, likely belonging to a III-V or II-VI semiconductor family based on nomenclature conventions. This material appears to be either a research-phase compound or a specialized variant used in niche semiconductor applications where specific electronic or optoelectronic properties are required. The material's selection would be driven by its band gap characteristics, carrier mobility, or thermal stability in devices requiring performance beyond conventional silicon or gallium arsenide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26.99 | GPa | — | ||
Shear Modulus(G) | 13.63 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.001 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.419 | eV/atom | — |