I3N is an indium nitride ceramic compound belonging to the III-nitride family, a class of wide-bandgap semiconductors known for electronic and optoelectronic applications. While still largely in research and development stages, indium nitride is studied for high-frequency power electronics, photodetectors, and optoelectronic devices operating in the infrared and near-ultraviolet spectrum, offering potential advantages over traditional semiconductors in specialized high-performance applications where conventional materials reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.956 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8740 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 11.02 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6784 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.6745 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data