HoVO3
semiconductorHoVO3 is a holmium vanadate compound belonging to the rare-earth transition metal oxide semiconductor family. This material is primarily of research interest for photocatalytic applications, particularly in environmental remediation and energy conversion, where its narrow bandgap and layered perovskite-like structure offer potential advantages over conventional semiconductors like TiO2. Engineers considering HoVO3 would evaluate it for specialized optoelectronic or catalytic systems where rare-earth doping and vanadium's variable oxidation states provide tunable electronic properties, though material availability and manufacturing scalability remain development challenges compared to established semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2836 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.255 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.4000 | μB | — | ||
| ↳ | 8.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -3.276 | eV/atom | — | ||
| ↳ | -3.205 | eV/atom | — |