HoTlO₃ is a rare-earth thallium oxide semiconductor compound combining holmium and thallium in an oxide matrix. This is an experimental/research material studied primarily in solid-state physics and materials chemistry; it belongs to the family of rare-earth oxides with potential applications in photonic and electronic devices. The combination of holmium's magnetic properties with thallium's electronic characteristics makes it of scientific interest for next-generation semiconductor applications, though it remains largely at the laboratory stage without widespread industrial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.110 | eV | — | ||
Magnetic Moment(μB) | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.287 | eV/atom | — |