HoInO3 is a holmium indium oxide compound belonging to the rare-earth oxide semiconductor family, typically synthesized as a ceramic or thin-film material for research applications. This is an experimental/exploratory compound studied primarily in materials science research rather than established commercial production; the material family shows promise for optoelectronic and photonic devices due to rare-earth element properties, though practical engineering adoption remains limited pending demonstration of scalable synthesis and performance advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.521 | eV | — | ||
Magnetic Moment(μB) | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.123 | eV/atom | — |