HoBO3 is a holmium borate semiconductor compound that belongs to the rare-earth borate material family. This material is primarily of research and developmental interest for optoelectronic and photonic applications, where holmium-doped systems are valued for their luminescent properties in the infrared spectrum. The compound represents an emerging class of functional ceramics with potential use in specialized optical devices, though it remains less established in mainstream industrial production compared to conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2268 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.049 | eV | — | ||
| ↳ | 5.511 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 12.26 | - | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 1.261 | C/m² | — | ||
| ↳ | 0.5856 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -244.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -2.528 | eV/atom | — | ||
| ↳ | -3.323 | eV/atom | — |