HoAcO3 — Properties & Data | MatWorld

HoAcO3

semiconductor

· HoAcO3

HoAcO3 is a holmium-based acetate oxide compound that functions as a semiconductor material, likely synthesized for research applications in materials science and solid-state chemistry. This compound belongs to the family of rare-earth oxide systems and represents an emerging material rather than an established industrial standard; its potential lies in exploiting holmium's unique electronic and magnetic properties for next-generation semiconductor or photonic device development.

rare-earth semiconductor researchexperimental optoelectronic devicessolid-state physics studiesmagnetic material characterizationadvanced ceramic processinglaboratory-scale material development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.620	eV	DFT · PBE
Magnetic Moment(μB)	0.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.535	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

HoAcO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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