Ho₆Re₁O₁₂ is a mixed-metal oxide semiconductor composed of holmium and rhenium in a crystalline structure. This is a research-phase compound within the family of rare-earth rhenium oxides, studied primarily for its electronic and photonic properties rather than established commercial applications. The material's potential lies in advanced semiconductor applications where the combination of rare-earth (holmium) and refractory metal (rhenium) oxides may offer unique band-gap characteristics, thermal stability, or catalytic behavior compared to single-metal oxide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.735 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.448 | eV/atom | — |