Ho6 Bi2 Rh1

semiconductor

· Ho6 Bi2 Rh1

Ho6Bi2Rh1 is an experimental ternary intermetallic compound combining holmium, bismuth, and rhodium. This rare-earth-containing semiconductor is primarily a research material being investigated for its electrical and magnetic properties, with potential applications in advanced electronic or thermoelectric devices where rare-earth metallics offer unique electronic structures unavailable in conventional semiconductors.

thermoelectric materials researchrare-earth semiconductorsmagnetoelectronic deviceshigh-temperature electronicsmaterials physics experimentationintermetallic compound development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	63.19	GPa	—
Shear Modulus(G)	28.99	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01590	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6440	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho6 Bi2 Rh1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control