Ho₄SiGe₃ is a rare-earth intermetallic ceramic compound combining holmium with silicon and germanium. This is a research-phase material explored for high-temperature and specialized electronic applications, belonging to the family of rare-earth silicides and germanides that exhibit unique thermal, electrical, and magnetic properties. The material's dense crystal structure and rare-earth dopant make it of particular interest in fundamental materials science and potential niche applications where conventional ceramics or semiconductors fall short.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3077 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00560 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.8535 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data