Ho₄Si₄Ir₄ is an intermetallic semiconductor compound combining holmium, silicon, and iridium in a 1:1:1 stoichiometric ratio. This is an experimental/research material explored primarily for its electronic and thermal properties at elevated temperatures, with potential applications in thermoelectric devices and high-temperature electronics where rare-earth intermetallics offer unique band structure characteristics. The incorporation of iridium—a refractory transition metal—and holmium—a lanthanide element—suggests investigation into materials for extreme environments where conventional semiconductors degrade.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,929.7 | ksi | — | ||
Shear Modulus(G) | 10,761.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00310 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.069 | eV/atom | — |