Ho₄Bi₄O₁₄ is a mixed rare-earth and bismuth oxide ceramic compound that functions as a semiconductor material. This is primarily a research-phase material belonging to the family of complex oxide semiconductors, studied for its potential electronic and photonic properties arising from the combination of holmium (rare-earth element) and bismuth oxide phases. While industrial deployment remains limited, materials in this class are investigated for photocatalytic applications, scintillation detection, and advanced optoelectronic devices where the rare-earth dopant and bismuth oxide matrix can enable tunable bandgaps and light emission properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.352 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.287 | eV/atom | — |