Ho3 Sn1 C1
semiconductorHo₃Sn₁C₁ is a ternary intermetallic semiconductor compound containing holmium, tin, and carbon, representing an emerging material in the rare-earth intermetallic family with potential for electronic and thermoelectric applications. This material is primarily of research interest rather than established in widespread industrial production; compounds in this family are explored for their unique electronic band structures and potential use in specialized semiconductor devices where rare-earth elements provide distinctive magnetic or electronic properties. Engineers would consider such materials for niche applications requiring the combined properties of rare-earth chemistry with intermetallic bonding, though commercial viability and manufacturing scalability remain under investigation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42.93 | GPa | — | ||
Shear Modulus(G) | 22.58 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03180 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.450 | eV/atom | — |