Ho₃Mg₃In₃ is an intermetallic semiconductor compound combining holmium (a rare earth element), magnesium, and indium in a 1:1:1 stoichiometric ratio. This is an experimental research material rather than an established commercial compound; it belongs to the family of ternary intermetallics that are investigated for potential optoelectronic, thermoelectric, and magnetic applications where rare earth elements can introduce unique electronic and magnetic properties. The material's relevance lies in fundamental materials science research exploring new semiconducting phases, particularly for applications requiring rare earth functionalization in solid-state devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,375.1 | ksi | — | ||
Shear Modulus(G) | 6,124.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01120 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4000 | eV/atom | — |