Ho3 In1 C1

semiconductor

· Ho3 In1 C1

Ho3In1C1 is a rare-earth intermetallic compound combining holmium, indium, and carbon, belonging to the semiconductor materials family with potential for advanced electronic and photonic applications. This is primarily a research-phase material studied for its unique electronic properties arising from rare-earth elements; while not yet widely commercialized, materials in this family are investigated for high-temperature semiconductors, magnetic devices, and specialized optoelectronic components where rare-earth doping provides enhanced performance over conventional semiconductors.

research semiconductorsrare-earth electronicshigh-temperature devicesmagnetic applicationsemerging optoelectronicsintermetallic compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	5,999.8	ksi	—
Shear Modulus(G)	3,243	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01160	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.563	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho3 In1 C1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control