Ho3 Ga1 C1

semiconductor

· Ho3 Ga1 C1

Ho3Ga1C1 is an experimental ternary carbide compound combining holmium, gallium, and carbon in a fixed stoichiometric ratio. This material belongs to the rare-earth carbide family and is primarily of interest in research contexts exploring novel semiconductor and refractory properties, rather than established industrial production. The combination of a rare-earth element (holmium) with gallium and carbon suggests potential applications in high-temperature electronics, wide-bandgap semiconductors, or specialized ceramics, though practical engineering use remains limited pending further materials characterization and scalability demonstrations.

research semiconductorsrare-earth carbideshigh-temperature electronicsexperimental materialswide-bandgap devicesrefractory compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	6,942.5	ksi	—
Shear Modulus(G)	4,104.6	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01130	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.139	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho3 Ga1 C1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control