Ho3 Al1 N1
semiconductor· Ho3 Al1 N1
Ho₃Al₁N₁ is an experimental rare-earth aluminum nitride compound belonging to the family of ternary nitride semiconductors. This research material combines holmium (a rare-earth element) with aluminum nitride, a well-established wide-bandgap semiconductor platform, and represents an emerging class of materials being investigated for their unique electronic and thermal properties that differ from binary AlN. While not yet in commercial production, ternary rare-earth nitrides are of significant interest for high-temperature power electronics, optoelectronics, and advanced semiconductor devices where rare-earth doping can modify bandgap, carrier mobility, and thermal conductivity compared to undoped alternatives.
High-temperature semiconductor researchWide-bandgap power electronicsOptoelectronic device developmentRare-earth doped materials researchThermal management semiconductorsNext-generation transistor studies
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.