Ho2 Zn1 Os1 — Properties & Data | MatWorld

Ho2 Zn1 Os1

semiconductor

· Ho2 Zn1 Os1

Ho₂Zn₁Os₁ is an intermetallic compound combining holmium (rare earth), zinc, and osmium in a 2:1:1 stoichiometric ratio. This is a research-phase material studied for its potential semiconductor behavior and rare earth metallurgical properties, rather than an established commercial compound. The combination of rare earth and refractory metal elements suggests investigation into high-temperature stability, magnetic properties, or catalytic applications within materials science research.

experimental semiconductor researchrare earth alloy developmenthigh-temperature materialscatalysis researchmagnetic materials investigationmaterials characterization studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00200	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4110	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho2 Zn1 Os1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control