Ho₂S₂F₂ is an experimental semiconductor compound combining holmium, sulfur, and fluorine elements, representing an emerging class of mixed-anion rare-earth chalcogenides. This material is primarily of research interest for potential optoelectronic and photonic device applications, leveraging rare-earth elements' unique electronic and luminescent properties in semiconductor systems. The fluorine-sulfur combination creates an unusual crystal structure that may offer tunable bandgap and enhanced carrier transport compared to conventional single-anion semiconductors, though it remains largely in early-stage investigation rather than established industrial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17,072.5 | ksi | — | ||
Shear Modulus(G) | 9,344.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.390 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.230 | eV/atom | — |