Holmium oxide sulfide (Ho₂S₁O₂) is a rare-earth compound semiconductor combining holmium with sulfur and oxygen, representing a mixed-anion material in the lanthanide family. This is primarily a research-phase compound with potential applications in optoelectronics and photonic devices, where rare-earth semiconductors are explored for their unique optical and electronic properties. The material's significance lies in its potential for mid-infrared light emission and high-refractive-index applications, though industrial adoption remains limited compared to established rare-earth oxides or III-V semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18,722.8 | ksi | — | ||
Shear Modulus(G) | 10,360.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.155 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.461 | eV/atom | — |