Ho2 P10
semiconductorHo₂P₁₀ is an experimental phosphide semiconductor compound containing holmium and phosphorus, representing a rare-earth phosphide material under investigation for advanced electronic and optoelectronic applications. This compound belongs to the broader family of rare-earth pnictide semiconductors, which are of research interest for their potential in high-temperature electronics, photonic devices, and specialized quantum applications where conventional semiconductors reach performance limits. The material's notable stiffness characteristics and semiconducting behavior make it a candidate for environments requiring thermal stability and mechanical robustness, though industrial deployment remains limited while material processing and device integration techniques are still being developed.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |