Ho₂O₆ is a rare-earth oxide semiconductor compound containing holmium, belonging to the family of lanthanide oxides studied for electronic and photonic applications. This material exists primarily in research contexts where it is investigated for potential use in optical devices, luminescent applications, and specialized semiconductor systems that leverage rare-earth electronic properties. Ho₂O₆ represents an emerging compound within rare-earth materials research, with properties and processing methods still under development compared to more established semiconductor oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00240 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.729 | eV/atom | — |