Ho₂Mn₁Os₁ is an intermetallic compound containing holmium (rare earth), manganese, and osmium, classed as a semiconductor. This is a research-phase material rather than a commercial product; such rare-earth intermetallics are typically explored for their magnetic, electronic, or thermal properties in specialized applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04300 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.08200 | eV/atom | — |