Ho2In1Ag1 is an intermetallic compound combining holmium, indium, and silver, belonging to the rare-earth semiconductor family. This material is primarily of research interest for potential thermoelectric and magnetoelectronic applications where rare-earth elements offer tunable magnetic and electronic properties. While not yet widely deployed in mainstream industrial production, intermetallic compounds of this type are investigated for next-generation energy conversion devices and cryogenic applications where the combination of rare-earth behavior, metallic bonding, and semiconductor characteristics may provide advantages over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,128.4 | ksi | — | ||
Shear Modulus(G) | 4,284.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00300 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4270 | eV/atom | — |