Ho₂I₂O₂ is an iodide oxide semiconductor compound containing holmium, representing an emerging class of mixed-anion materials with potential optoelectronic and photonic properties. This material is primarily of research interest rather than established industrial production, belonging to the rare-earth iodide oxide family that shows promise for applications requiring specific electronic band structures or ionic conductivity. The holmium-based composition positions it within exploratory materials science for advanced semiconductors and functional ceramics where rare-earth doping or rare-earth-dominant phases offer unique magnetic, optical, or catalytic behavior.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 46.66 | GPa | — | ||
Shear Modulus(G) | 30.47 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.520 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.912 | eV/atom | — |