Ho₂Cd₁Os₁ is an intermetallic semiconductor compound combining holmium (rare earth), cadmium, and osmium. This is a research-phase material studied primarily in condensed matter physics and materials chemistry; it is not currently in widespread industrial production. The compound belongs to the family of rare-earth intermetallics, which are investigated for potential applications in thermoelectric devices, magnetic systems, and quantum materials due to the electronic and magnetic properties contributed by holmium and the high atomic mass density from osmium.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,924.4 | ksi | — | ||
Shear Modulus(G) | 5,012.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02690 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3390 | eV/atom | — |