Ho2 Bi2 O6

semiconductor

· Ho2 Bi2 O6

Ho₂Bi₂O₆ is a mixed-metal oxide semiconductor compound combining holmium and bismuth in a layered perovskite or pyrochlore-type crystal structure. This is a research-phase material primarily investigated for its electronic and photocatalytic properties rather than established in high-volume industrial production. The compound is notable within the family of rare-earth bismuth oxides for potential applications in photocatalysis and optoelectronics, where the combination of rare-earth and bismuth elements offers tunable band gap and charge-carrier dynamics compared to single-component oxide semiconductors.

photocatalytic water splittingvisible-light photocatalysisoptoelectronic researchrare-earth oxide semiconductorsenvironmental remediation (experimental)thin-film device research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.423	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.568	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho2 Bi2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control