Ho2 Al1 Os1

semiconductor

· Ho2 Al1 Os1

Ho₂Al₁Os₁ is an experimental intermetallic compound combining holmium (a rare-earth element), aluminum, and osmium, classified as a semiconductor. This ternary composition represents early-stage materials research rather than an established industrial material, with potential applications in high-temperature electronics or specialized magnetic devices given holmium's rare-earth properties and osmium's exceptional hardness and corrosion resistance. Engineers would evaluate this material primarily for niche research contexts requiring rare-earth semiconducting behavior, though practical production scale and cost-effectiveness relative to conventional alternatives remain undetermined.

High-temperature electronics researchRare-earth semiconductor applicationsExperimental intermetallicsMagnetic device componentsMaterials science characterizationAdvanced alloy development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	104.3	GPa	—
Shear Modulus(G)	39.46	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00460	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3770	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho2 Al1 Os1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control