Ho1 Tl1 O2

semiconductor

· Ho1 Tl1 O2

Ho1Tl1O2 is an experimental mixed-metal oxide semiconductor composed of holmium and thallium. This compound belongs to the family of rare-earth-containing oxides and is primarily of research interest for investigating novel electronic and optical properties that arise from the combination of lanthanide (holmium) and post-transition metal (thallium) elements. While not yet established in mainstream industrial production, materials in this chemical family are being explored for potential applications in advanced electronics, photonics, and specialized sensor technologies where rare-earth doping and unusual electronic structures may provide advantages over conventional semiconductors.

research and developmentexperimental semiconductorsrare-earth oxide compoundsphotonic materialsadvanced electronic devicesoptical sensors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	96.09	GPa	—
Shear Modulus(G)	48.61	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.575	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.593	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho1 Tl1 O2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control