Ho1 Sn1 O3
semiconductor· Ho1 Sn1 O3
Ho1Sn1O3 is an experimental ternary oxide semiconductor compound combining holmium and tin in a 1:1 stoichiometric ratio. This material belongs to the rare-earth tin oxide family and is primarily of research interest for investigating novel electronic and optical properties that may arise from the combination of a rare-earth element with a post-transition metal oxide. While not yet established in mainstream industrial production, materials in this family are being explored for potential applications in optoelectronics, photocatalysis, and solid-state devices where rare-earth doping or ternary oxide systems can offer tunable band gaps and enhanced functional properties.
photocatalytic applicationsoptoelectronic researchrare-earth oxide semiconductorsthin-film deposition studiesnext-generation electronic materialsmaterials characterization research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.