Ho₁Si₂ is an intermetallic compound belonging to the rare-earth silicide family, combining holmium with silicon in a defined stoichiometric ratio. This material is primarily of research interest for its potential in high-temperature applications and electronic device development, where rare-earth silicides are investigated for their thermal stability, electrical properties, and potential use as diffusion barriers or contact materials in semiconductor processing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,239.6 | ksi | — | ||
Shear Modulus(G) | 3,227.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00420 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4490 | eV/atom | — |