Ho₁Si₂Ir₂ is an intermetallic compound combining holmium, silicon, and iridium—a rare-earth transition metal silicide that exhibits semiconductor behavior. This material represents an experimental composition in the growing field of rare-earth intermetallics, where the combination of holmium's magnetic properties with iridium's high thermal and chemical stability creates potential for specialized electronic and thermal management applications. Such compounds are typically investigated for high-temperature electronics, magnetic devices, and catalytic applications where conventional semiconductors fail.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26,224.4 | ksi | — | ||
Shear Modulus(G) | 14,939.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01620 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.029 | eV/atom | — |