Ho1 Si2

semiconductor

· Ho1 Si2

Ho₁Si₂ is an intermetallic compound belonging to the rare-earth silicide family, combining holmium with silicon in a defined stoichiometric ratio. This material is primarily of research interest for its potential in high-temperature applications and electronic device development, where rare-earth silicides are investigated for their thermal stability, electrical properties, and potential use as diffusion barriers or contact materials in semiconductor processing.

thin-film semiconductorshigh-temperature electronicsrare-earth device researchbarrier layer materialsmetallurgical research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	84.39	GPa	—
Shear Modulus(G)	22.25	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00420	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4490	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho1 Si2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control