Ho1Ni1Bi1 is an intermetallic compound combining holmium, nickel, and bismuth in a 1:1:1 stoichiometric ratio. This is a research-phase semiconductor material within the rare-earth intermetallic family, studied primarily for its electronic and magnetic properties rather than established commercial production. The material's potential applications lie in advanced electronics, magnetic devices, and thermoelectric systems where rare-earth intermetallics offer tunable band structures and strong spin-orbit coupling, though practical deployment remains limited to specialized laboratory and experimental contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,294.4 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 7,211.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.08770 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7130 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data