Ho1 Ni1 Bi1

semiconductor

· Ho1 Ni1 Bi1

Ho1Ni1Bi1 is an intermetallic compound combining holmium, nickel, and bismuth in a 1:1:1 stoichiometric ratio. This is a research-phase semiconductor material within the rare-earth intermetallic family, studied primarily for its electronic and magnetic properties rather than established commercial production. The material's potential applications lie in advanced electronics, magnetic devices, and thermoelectric systems where rare-earth intermetallics offer tunable band structures and strong spin-orbit coupling, though practical deployment remains limited to specialized laboratory and experimental contexts.

thermoelectric devicesmagnetic semiconductorsrare-earth electronics researchtopological material studiessolid-state physicsexperimental photonics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	84.77	GPa	—
Shear Modulus(G)	49.72	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.08770	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7130	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ho1 Ni1 Bi1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control