Ho1N1 is a rare-earth nitride semiconductor compound combining holmium and nitrogen, representing a member of the rare-earth nitride family that has been investigated for advanced electronic and photonic applications. This material is notable in research contexts for its potential in high-temperature semiconductor devices and magnetic applications, though it remains largely experimental compared to mainstream semiconductors like silicon or gallium nitride. Engineers exploring Ho1N1 would be evaluating it for niche applications where rare-earth properties—such as unique electronic band structure or magnetic characteristics—offer advantages over conventional alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24,206.8 | ksi | — | ||
Shear Modulus(G) | 7,666.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01430 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.052 | eV/atom | — |