Ho1Ga3 is an intermetallic compound in the rare-earth gallide family, combining holmium with gallium in a defined stoichiometric ratio. This material belongs to the broader class of rare-earth compounds with potential applications in advanced semiconducting and magnetic device research. While not yet widely established in mainstream industrial production, Ho1Ga3 represents the type of engineered intermetallic that researchers investigate for specialized optoelectronic, magnetic, or thermoelectric applications where the unique electronic structure of rare-earth-gallium systems offers distinct advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,964.1 | ksi | — | ||
Shear Modulus(G) | 5,334.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5160 | eV/atom | — |