Ho₁Ga₂ is an intermetallic compound combining holmium (a rare-earth element) with gallium, typically studied as a research material in the semiconductor and rare-earth materials families. This compound is primarily investigated for potential applications in high-temperature electronics, magnetism-based devices, and specialized optoelectronic systems where rare-earth elements provide unique magnetic or luminescent properties. While not yet established in mainstream industrial production, Ho₁Ga₂ represents the broader class of rare-earth gallides being explored for next-generation functional materials where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01860 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6290 | eV/atom | — |