Ho₁Bi₂Cl₁O₄ is a rare-earth bismuth oxyhalide semiconductor, a mixed-valence compound combining holmium and bismuth with chloride and oxide anions. This material belongs to an emerging class of layered halide perovskites and bismuth-based semiconductors being investigated for optoelectronic and photocatalytic applications. Currently in the research phase rather than established in high-volume manufacturing, this compound shows promise in the broader family of lead-free semiconductors due to its potential for tunable bandgap and photocatalytic activity under visible light.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 84.42 | GPa | — | ||
Shear Modulus(G) | 45.13 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.436 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.227 | eV/atom | — |